0000000000470855

AUTHOR

Kimmo Saarinen

showing 2 related works from this author

Positron Annihilation Characteristics in Zn1-xMgxSe Mixed Crystals

1998

Nuclear physicsMaterials scienceGeneral Physics and AstronomyPositron annihilationActa Physica Polonica A
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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

2006

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es

PhotoluminescenceMaterials scienceAstrophysics::High Energy Astrophysical PhenomenaEdge regionAnalytical chemistrySemiconductor thin filmsGeneral Physics and AstronomyPositron annihilation spectroscopyCondensed Matter::Materials Science:FÍSICA [UNESCO]Zinc compoundsMetalorganic vapour phase epitaxyDeposition (law)Positron annihilationCondensed matter physicsCondensed Matter::OtherPhysicsWide-bandgap semiconductorpositron annihilationUNESCO::FÍSICACacancies (crystal)II-VI semiconductorsWide band gap semiconductorsZn vacanciesMOCVDSapphireZnOphotoluminescenceZinc compounds ; II-VI semiconductors ; Wide band gap semiconductors ; Semiconductor thin films ; Positron annihilation ; Cacancies (crystal) ; MOCVD
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