6533b825fe1ef96bd1283248

RESEARCH PRODUCT

Correlation between Zn vacancies and photoluminescence emission in ZnO films.

Filip TuomistoVicente Muñoz-sanjoséFernando PlazaolaJ. Zuniga PerezJosé ÁNgel GarcíaKimmo SaarinenA. Zubiaga

subject

PhotoluminescenceMaterials scienceAstrophysics::High Energy Astrophysical PhenomenaEdge regionAnalytical chemistrySemiconductor thin filmsGeneral Physics and AstronomyPositron annihilation spectroscopyCondensed Matter::Materials Science:FÍSICA [UNESCO]Zinc compoundsMetalorganic vapour phase epitaxyDeposition (law)Positron annihilationCondensed matter physicsCondensed Matter::OtherPhysicsWide-bandgap semiconductorpositron annihilationUNESCO::FÍSICACacancies (crystal)II-VI semiconductorsWide band gap semiconductorsZn vacanciesMOCVDSapphireZnOphotoluminescenceZinc compounds ; II-VI semiconductors ; Wide band gap semiconductors ; Semiconductor thin films ; Positron annihilation ; Cacancies (crystal) ; MOCVD

description

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es

yearjournalcountryeditionlanguage
2006-03-01
10.1063/1.2175476http://hdl.handle.net/10550/11213