Search results for "MOCVD"
showing 10 items of 28 documents
Sb-implanted ZnO ultra-thin films
2017
Mild heating of the Zn(C5F6HO2)(2)center dot 2H(2)O center dot CH3(OCH2CH2)(2)OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV-vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.
Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique
2017
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
Ultrathin and nanostructured ZnO-based films for fluorescence biosensing applications
2011
The fluorescence-based sensing capability of ultrathin ZnO-SiO(2) nanoplatforms, deposited by an integrated approach of colloidal lithography and metal organic chemical vapor deposition, has been investigated upon adsorption of fluorescein-labeled albumin, used as model analyte biomolecule. The protein immobilization process after spontaneous adsorption/desorption significantly enhances the green emission of the different ZnO-based films, as evidenced by scanning confocal microscopy, corresponding to a comparable protein coverage detected by X-ray photoelectron spectroscopy. Moreover, experiments of fluorescence recovery after photobleaching evidence that the protein lateral diffusion at th…
Metallic interconnects for SOFC: Characterisation of corrosion resistance and conductivity evaluation at operating temperature of differently coated …
2007
Abstract One of challenges in improving the performance and cost-effectiveness of solid oxide fuel cells (SOFCs) is the development of suitable interconnect materials. Recent researches have enabled to decrease the operating temperature of the SOFC from 1000 to 800 °C. Chromia forming alloys are then among the best candidates for interconnects. However, low electronic conductivity and volatility of chromium oxide scale need to be solved to improve interconnect performances. In the field of high temperature oxidation of metals, it is well known that the addition of reactive element into alloys or as thin film coatings, improves their oxidation resistance at high temperature. The elements of …
Metallic interconnects for solid oxide fuel cell: Effect of water vapour on oxidation resistance of differently coated alloys
2009
International audience; The need of interconnect to separate fuel and oxidant gasses and connect individual cells into electrical series in a SOFC stack appears as one of the most important point in fuel cell technology. Due to their high electrical and thermal conductivities, thermal expansion compatibility with the other cell components and lowcost, ferritic stainless steels (FSS) are nowconsidered to be among the most promising candidate materials as interconnects in SOFC stacks. Despite the formation at 800 ◦C of a protective chromia Cr2O3 scale, it can transform in volatile chromium species, leading to the lost of its protectiveness and then the degradation of the fuel cell. A previous…
Faceting and structural anisotropy of nanopatterned CdO(110) layers
2005
CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…
Investigation of La2O3 and/or (Co,Mn)3O4 deposits on Crofer22APU for the SOFC interconnect application
2009
International audience; Chromia forming alloys (stainless steels) are among the best candidates for SOFC interconnects. However, problems of decreasing electronic conductivity during high temperature service and volatility of chromium oxide scales need to be solved. Electronically conductive surface coatings, which also reduce oxide scale growth and chromium volatility, are needed to improve stainless steel interconnects. The goal of this study is to investigate combinations of lanthanum oxide (La2O3) and cobalt manganese oxide ((Co,Mn)3O4) coatings on Crofer22APU stainless steel. Thin film coatings of La2O3 (~200 nm) and Co,Mn (1:1) (~2 mm) were deposited via metal organic chemical vapor d…
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
2008
http://link.aip.org/link/?JAPIAU/103/056108/1
Chemical characterization of gallium droplets grown by LP-MOCVD.
2006
International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
Interfacial reaction during MOCVD growth revealed by in situ ARXPS.
2006
International audience; Angle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were performed to study in situ the reaction at the film–substrate interface during metal organic chemical vapor deposition (MOCVD) growth of TiO2 thin films deposited on the silicon substrate. The in-depth distribution of chemical species was determined using several ARXPS thickness calculation models considering either single or bilayer systems. By the comparison of two single-layermodels, the presence of a second layer composed of silicon oxidewas evidenced. High-resolution transmission electron microscopy (HRTEM) observations confirmed the stratification of the film in two layers, as well as the …