6533b7d6fe1ef96bd1267194
RESEARCH PRODUCT
Chemical characterization of gallium droplets grown by LP-MOCVD.
Luc ImhoffOlivier HeintzV. GauthierC. Marco De LucasSylvie Bourgeoissubject
Materials scienceSiliconAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technologySubstrate (electronics)Chemical vapor deposition010402 general chemistry01 natural sciencesX-ray photoelectron spectroscopyGallium dropletsXPSMetalorganic vapour phase epitaxyGalliumSurfaces and InterfacesGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSurfaces Coatings and FilmschemistryTransmission electron microscopyMOCVDTEM0210 nano-technologyLayer (electronics)SIMSdescription
International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-12-01 |