6533b7d9fe1ef96bd126bf3a

RESEARCH PRODUCT

Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique

Alvars KjapsnaLauris DimitrocenkoIvars TaleAnatoly TrukhinReinis IgnatansRolands Grants

subject

Gallium oxideSapphireCrystal structureMOCVD:NATURAL SCIENCES:Physics [Research Subject Categories]WaterTrimethylgallium

description

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

10.4028/www.scientific.net/kem.721.253https://dspace.lu.lv/dspace/handle/7/52591