0000000000115570
AUTHOR
Fernando Plazaola
showing 8 related works from this author
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Mesoporous iron phosphate/phosphonate hybrid materials
2014
Abstract Relatively high surface area pure mesoporous iron-phosphorus oxide-based derivatives have been synthesized through an S + I − surfactant-assisted cooperative mechanism by means of a one-pot preparative procedure from aqueous solution and starting from iron atrane complexes and phosphoric and phosphonic acids. A soft chemical extraction procedure allows opening the pore system of the parent as-prepared materials by exchanging the surfactant without mesostructure collapse. The nature of the pore wall can be modulated from iron phosphate up to hybrids involving approximately 30% of organophosphorus entities (phosphonates or diphosphonates). X-ray powder diffraction, transmission elect…
Correlation between Zn vacancies and photoluminescence emission in ZnO films.
2006
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es
Near band edge recombination mechanisms in GaTe
2003
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL) response for different excitation intensities at energies higher than the band gap. The PL intensity variation of recombination peaks as a function of the excitation intensity has been measured and fitted by a power law. The results show some particular features that do not appear in other III-V and II-VI compound semiconductors. These features can be interpreted by means of the recombination dynamics of the carriers in the band-gap edges. The expressions for the coefficients associated with different recombination rates and the relations between them are derived and used for understanding the recombinatio…
Temperature- and illumination-induced charge-state change in divacancies of GaTe
2010
Temperature-dependent positron annihilation lifetime spectroscopy measurements have been performed in GaTe samples, with and without illumination. The average lifetime shows a monotonous temperature evolution but the lifetime decomposition shows a rich behavior. It is produced by two types of vacancy defects. The vacancy-type defects characterized by their shorter lifetime change their charge state below 100 K and when illuminating with light of an energy of 0.8 eV.
Thermal Creation of Defects in GaTe
2008
Photoluminescence spectra of as-grown and annealed GaTe single crystals in the 0.7–1.8 eV range have been analyzed at different temperatures. Annealing up to 200 °C produces an increase in the recombination intensity of an excitonic characteristic. The annealing at 400 °C generates an intense optically active recombination in the infrared region (0.76 eV). The thermal generation of defects is possible, owing to the low melting temperature of GaTe (800 °C).
Observation of a charge delocalization from Se vacancies inBi2Se3: A positron annihilation study of native defects
2016
By means of positron annihilation lifetime spectroscopy, we have investigated the native defects present in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, which belongs to the family of topological insulators. We experimentally demonstrate that selenium vacancy defects $({\text{V}}_{\text{Se1}})$ are present in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ as-grown samples, and that their charge is delocalized as temperature increases. At least from 100 K up to room temperature both ${\text{V}}_{\text{Se1}}^{0}$ and ${\text{V}}_{\text{Se1}}^{+}$ charge states coexist. The observed charge delocalization determines the contribution of ${\text{V}}_{\text{Se1}}$ defects to the $n$-type conductivity of ${\mathrm{…
Determination of defect content and defect profile in semiconductor heterostructures
2011
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.