6533b852fe1ef96bd12aab41
RESEARCH PRODUCT
Temperature- and illumination-induced charge-state change in divacancies of GaTe
Vicente Muñoz-sanjoséJosé ÁNgel GarcíaA. ZubiagaFernando PlazaolaC. Martínez-tomássubject
Materials sciencePositron Lifetime SpectroscopyVacancy defectCharge (physics)Atomic physicsElectrostatic inductionCondensed Matter PhysicsSpectroscopyDecompositionElectronic Optical and Magnetic MaterialsPositron annihilationdescription
Temperature-dependent positron annihilation lifetime spectroscopy measurements have been performed in GaTe samples, with and without illumination. The average lifetime shows a monotonous temperature evolution but the lifetime decomposition shows a rich behavior. It is produced by two types of vacancy defects. The vacancy-type defects characterized by their shorter lifetime change their charge state below 100 K and when illuminating with light of an energy of 0.8 eV.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2010-05-19 | Physical Review B |