0000000000047027
AUTHOR
C. Martínez-tomás
MOCVD growth of CdO very thin films: Problems and ways of solution
Abstract In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20 nm, which is five times thinner than the values previously re…
X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy
CdO thin films have been grown on a-plane (110), c-plane (0001), r-plane (012) and m-plane (100) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the pres…
Negative U‐properties of the oxygen‐vacancy in ZnO
It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative- U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
A new approach to the growth of ZnO by vapour transport
The crystal growth of ZnO by vapour transport is classically made in presence of additional species which enhance the growth process. Usually, additional species have been considered as chemical transport agents that promote a typical CVT (Chemical Vapour Transport) process. Recently, we have proposed a new interpretation of the chemical role of some of these species. This new interpretation considers that, in some cases, the additional species promote a partial consumption of the O2 provided by the ZnO decomposition and, consequently, a Zn excess is generated. This excess of Zn pressure activates the ZnO decomposition and the growth rate is enhanced. Among those species, carbon shows an ad…
CdTe crystal growth process by the Bridgman method: numerical simulation
Abstract Numerical simulation of the CdTe crystal growth process by the Bridgman method is made by using the commercial computational code FLUENT for the mathematical solution of the governing equations. To reduce computational effort, we have made use of a two level strategy. In the first level we have considered the whole system formed by the ampoule with the liquid–solid charge, the furnace, and the air between them. The heat transfer is assumed to occur by conduction, convection and radiation between the furnace and the ampoule, and only by conduction through the ampoule wall and the solid and liquid CdTe. In the second level we focus on the ampoule and its content, using the values of …
Numerical study of the ZnO growth by MOCVD
Abstract In order to analyze the growth of zinc oxide by metalorganic chemical vapor deposition, a numerical model has been developed to simulate the gas flow in a horizontal reactor. A two-inlet system, one for the Zn precursor and the other for the oxygen one, has been studied in the framework of this numerical simulation. This model takes into account the momentum conservation equation coupled with the heat transfer and mass transport of chemical species. Different Zn precursors, DiethylZinc (DEZn), DimethylZinc (DMZn) and DimethylZinc-TriethylAmine (DMZn-TEA) and oxygen precursors, ( tert -butanol, iso -propanol and acetone) as well as carrier gases (H 2 and N 2 ) have been considered. …
The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films
Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.
Near band edge recombination mechanisms in GaTe
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL) response for different excitation intensities at energies higher than the band gap. The PL intensity variation of recombination peaks as a function of the excitation intensity has been measured and fitted by a power law. The results show some particular features that do not appear in other III-V and II-VI compound semiconductors. These features can be interpreted by means of the recombination dynamics of the carriers in the band-gap edges. The expressions for the coefficients associated with different recombination rates and the relations between them are derived and used for understanding the recombinatio…
Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe
Abstract In order to analyse the epitaxial growth by metalorganic chemical vapour deposition (MOCVD) of mercury telluride, HgTe, a 2D numerical model has been developed to simulate the gas flow in a horizontal MOCVD reactor. This model takes into account the Navier–Stokes equations coupled with the heat transfer and mass transport of chemical species. For the mathematical resolution of the governing equations a commercial solver, which can be run in a conventional personal computer, has been used. The study carried out presents a discussion about the dominant growth regime in a MOCVD growth as a function of different parameters: substrate temperature, total flow, partial pressure of precurs…
Heat transfer simulation in a vertical Bridgman CdTe growth configuration
Modelling and numerical simulation of crystal growth processes have been shown to be powerful tools in order to understand the physical effects of different parameters on the growth conditions. In this study a finite difference/control volume technique for the study of heat transfer has been employed. This model takes into account the whole system: furnace temperature profile, air gap between furnace walls and ampoule, ampoule geometry, crucible coating if any, solid and liquid CdTe thermal properties, conduction, convection and radiation of heat and phase change. We have used the commercial code FLUENT for the numerical resolution that can be running on a personal computer. Results show th…
Temperature- and illumination-induced charge-state change in divacancies of GaTe
Temperature-dependent positron annihilation lifetime spectroscopy measurements have been performed in GaTe samples, with and without illumination. The average lifetime shows a monotonous temperature evolution but the lifetime decomposition shows a rich behavior. It is produced by two types of vacancy defects. The vacancy-type defects characterized by their shorter lifetime change their charge state below 100 K and when illuminating with light of an energy of 0.8 eV.
Morphology transitions in ZnO nanorods grown by MOCVD
Morphology transitions (nanorods–nanowalls and nanorods–nanotubes-layer) were induced in the growth of ZnO nanostructures by metal organic chemical vapor deposition (MOCVD) on c-sapphire, using helium as carrier gas, and dimethylzinc–triethylamine and nitrous oxide as zinc and oxygen sources, respectively. A systematic study of the influence of the VI/II ratio and precursor flow-rates on the morphology of ZnO nanorod arrays has been carried out, taking advantage of the ability of MOCVD to individually control the precursor partial pressures. Growth mechanisms are discussed to understand the evolution of the nanostructures morphology for different growth conditions. In particular, the influe…
Thermal Creation of Defects in GaTe
Photoluminescence spectra of as-grown and annealed GaTe single crystals in the 0.7–1.8 eV range have been analyzed at different temperatures. Annealing up to 200 °C produces an increase in the recombination intensity of an excitonic characteristic. The annealing at 400 °C generates an intense optically active recombination in the infrared region (0.76 eV). The thermal generation of defects is possible, owing to the low melting temperature of GaTe (800 °C).
Faceting and structural anisotropy of nanopatterned CdO(110) layers
CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…
Deep center luminescence versus surface preparation of ZnSe single crystals
A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.
Growth of ZnO crystals by vapour transport: Some ways to act on physical properties
Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of as-grown ZnO crystals can be changed in a controlled way by an adequate combi…