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RESEARCH PRODUCT
The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films
C. Martínez-tomásA. BoukhachemH. Maghraoui-meherziM. RiahiSaid Agouramsubject
010302 applied physicsMaterials scienceAnnealing (metallurgy)Band gapInorganic chemistryMetals and Alloyschemistry.chemical_element02 engineering and technologySurfaces and InterfacesThermal treatment021001 nanoscience & nanotechnologyTin oxide01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsBismuthCrystallinitychemistryChemical engineeringTransmission electron microscopy0103 physical sciencesMaterials ChemistryThin film0210 nano-technologydescription
Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-03-01 | Thin Solid Films |