6533b859fe1ef96bd12b7673

RESEARCH PRODUCT

Deep center luminescence versus surface preparation of ZnSe single crystals

C. Martínez-tomásJosé ÁNgel GarcíaJ. J. S. GaritaonandiaV. Muñoz

subject

PhotoluminescenceMaterials scienceMechanics of MaterialsClose relationshipSurface preparationMechanical EngineeringAnalytical chemistryRecrystallization (metallurgy)General Materials ScienceCondensed Matter PhysicsLuminescence

description

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.

yearjournalcountryeditionlanguage
2001-05-01Journal of Materials Research
https://doi.org/10.1557/jmr.2001.0174