6533b7d5fe1ef96bd1264564
RESEARCH PRODUCT
Negative U‐properties of the oxygen‐vacancy in ZnO
Bruno K. MeyerRamón Tena-zaeraDetlev M. HofmannJoachim SannC. Martínez-tomásGerhard PenslJesús Zúñiga-pérezThomas FrankVicente Muñoz-sanjoséD. Pfisterersubject
Deep-level transient spectroscopyChemistrychemistry.chemical_elementAtomic physicsCondensed Matter PhysicsOxygenConduction bandExcitationOxygen vacancyIntensity (physics)description
It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative- U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
year | journal | country | edition | language |
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2006-03-01 | physica status solidi c |