Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD

Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…

Negative U‐properties of the oxygen‐vacancy in ZnO

It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative- U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A new approach to the growth of ZnO by vapour transport

The crystal growth of ZnO by vapour transport is classically made in presence of additional species which enhance the growth process. Usually, additional species have been considered as chemical transport agents that promote a typical CVT (Chemical Vapour Transport) process. Recently, we have proposed a new interpretation of the chemical role of some of these species. This new interpretation considers that, in some cases, the additional species promote a partial consumption of the O2 provided by the ZnO decomposition and, consequently, a Zn excess is generated. This excess of Zn pressure activates the ZnO decomposition and the growth rate is enhanced. Among those species, carbon shows an ad…

Study of the ZnO crystal growth by vapour transport methods

Abstract The crystal growth of ZnO by vapour transport is classically made with the assistance of additional species that produce a gaseous mixture, the role of which remains often uncertain in the transport and growth process. Initially, in order to study the mass transport process, a numerical simulation is made to analyse which are the requirements to have an effective transport. As the pressure of each gaseous species is generally unknown, the numerical study has been performed for different total pressures. It is found that, if congruent and equilibrium conditions are assumed at the sublimation and crystallisation interfaces, effective growth conditions can only be attained for a narro…

Numerical study of the ZnO growth by MOCVD

Abstract In order to analyze the growth of zinc oxide by metalorganic chemical vapor deposition, a numerical model has been developed to simulate the gas flow in a horizontal reactor. A two-inlet system, one for the Zn precursor and the other for the oxygen one, has been studied in the framework of this numerical simulation. This model takes into account the momentum conservation equation coupled with the heat transfer and mass transport of chemical species. Different Zn precursors, DiethylZinc (DEZn), DimethylZinc (DMZn) and DimethylZinc-TriethylAmine (DMZn-TEA) and oxygen precursors, ( tert -butanol, iso -propanol and acetone) as well as carrier gases (H 2 and N 2 ) have been considered. …

ZnO/CdTe/CuSCN, a promising heterostructure to act as inorganic eta-solar cell

Abstract The ZnO/CdTe/CuSCN heterostructure was analyzed as a candidate to act as an inorganic eta -solar cell. A ZnO film consisting of single crystal nanocolumns was electrodeposited on a transparent conducting substrate which acts as n-type material. As absorber material we used CdTe, which was deposited on the ZnO columnar film by Metal Organic Chemical Vapor Deposition. In order to complete the eta -solar cell we deposited a CuSCN layer by chemical solution deposition. A conformal and uniform CdTe coverage of the ZnO columns was achieved, producing a very efficient light trapping effect. The effective absorption (∼87%) and effective reflectance (∼10%) of the complete heterostructure in…

CdSe-Sensitized p-CuSCN/Nanowire n-ZnO Heterojunctions

Intrinsic and extrinsic point-defects in vapor transport grown ZnO bulk crystals

Vapor transport grown ZnO bulk crystals were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga, and oxygen vacancies in the material. Annealing the samples in O 2 at about 1000 °C (2 atm, 20 h) reduces the H and V O donor concentration by typical one order of magnitude. The photoluminescence and DLTS results suggest a correlation between the broad unstructured emission at 2.45eV (green band) and a donor level 530 meV below the conduction band (E4).

Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe

Abstract In order to analyse the epitaxial growth by metalorganic chemical vapour deposition (MOCVD) of mercury telluride, HgTe, a 2D numerical model has been developed to simulate the gas flow in a horizontal MOCVD reactor. This model takes into account the Navier–Stokes equations coupled with the heat transfer and mass transport of chemical species. For the mathematical resolution of the governing equations a commercial solver, which can be run in a conventional personal computer, has been used. The study carried out presents a discussion about the dominant growth regime in a MOCVD growth as a function of different parameters: substrate temperature, total flow, partial pressure of precurs…

Zinc oxide nanocrystals as electron injecting building blocks for plastic light sources

Hybrid inorganic–organic light emitting devices (HyLEDs) employing ZnO nanocrystals as one of their metal oxide contacts lead to very bright devices on plastic substrates with performances superior to those obtained from the rigid counterparts employing planar films of bulk ZnO. The superior performance is related to the increase in the bandgap of the ZnO nanocrystals caused by quantum confinement effects. We demonstrate that this effect diminishes with increasing annealing temperature of the ZnO nanocrystal layer due to a gradual decrease of the bandgap towards the bulk ZnO value. Therefore, best performances were obtained with room temperature processing of the ZnO nanocrystals.

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of as-grown ZnO crystals can be changed in a controlled way by an adequate combi…

Fabrication and characterization of ZnO nanowires/CdSe/CuSCN eta-solar cell

Des cellules solaires extremely thin absorber (eta) ZnO/CdSe/CuSCN a base de nanofils de ZnO ont ete realisees avec succes en utilisant des techniques faciles d'acces de depot en solution et par voie electrochimique. Une couche constituee de nanofils de ZnO monocristallin de plusieurs microns de hauteur et de 100-200 nm de diametre a ete deposee sur un substrat de verre conducteur (SnO 2 :F) recouvert d'une couche de ZnO formee par pyrolyse de spray agissant comme couche electronique bloquante. Une couche mince de 30-40 nm de CdSe jouant le role d'un absorbeur a ete electrodeposee de maniere conforme le long des nanofils de ZnO. Les espaces entre les nanofils composite de ZnO/CdSe ont ete r…

The Scope of Zinc Oxide Bulk Growth

The techniques classically used for the growth of bulk ZnO crystals, melt-growth, vapour growth, solution-growth and hydrothermal growth, are reviewed. In the case of vapor growth, numerical simulations suggest that such species as H2 + H2O, CH4, Zn, C or Fe could act as sublimation activators. The electrical and structural properties of crystals obtained by these various techniques are compared.

MOCVD growth of CdTe on glass: analysis of in situ post-growth annealing

Abstract In this paper, we analyse the growth by MOCVD of CdTe on glass substrates using in situ post-growth annealing. First, in order to perform a systematic study, polycrystalline layers of CdTe were deposited by MOCVD on glass substrates. The structure and morphology of the layers was investigated as a function of different growth parameters, temperature, VI/II precursor molar ratio and substrate position on the susceptor. An activation energy of Ek=20.7 kcal/mol was obtained from the experimental data. In order to better understand the process and the effects of different growth parameters, a numerical model that simulated the gas flow in the reactor, was developed. Secondly we analyse…