6533b86efe1ef96bd12cb259

RESEARCH PRODUCT

MOCVD growth of CdTe on glass: analysis of in situ post-growth annealing

Vicente Muñoz-sanjoseJ. GonzálezIván Mora-seróRamón Tena-zaera

subject

ChemistryScanning electron microscopeSubstrate (electronics)Activation energyCondensed Matter PhysicsCadmium telluride photovoltaicsAnnealing (glass)Inorganic ChemistryCrystallographysymbols.namesakeChemical engineeringMaterials ChemistrysymbolsCrystalliteMetalorganic vapour phase epitaxyRaman spectroscopy

description

Abstract In this paper, we analyse the growth by MOCVD of CdTe on glass substrates using in situ post-growth annealing. First, in order to perform a systematic study, polycrystalline layers of CdTe were deposited by MOCVD on glass substrates. The structure and morphology of the layers was investigated as a function of different growth parameters, temperature, VI/II precursor molar ratio and substrate position on the susceptor. An activation energy of Ek=20.7 kcal/mol was obtained from the experimental data. In order to better understand the process and the effects of different growth parameters, a numerical model that simulated the gas flow in the reactor, was developed. Secondly we analysed the effect of in situ (i.e., inside the reactor) post-growth annealing. Layers with large grains have been produced with this procedure. The samples have been characterised by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. This characterisation shows structural changes induced by the annealing process and allows one to establish a correlation between those changes and the experimental conditions of the thermal process.

yearjournalcountryeditionlanguage
2004-02-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2003.10.033