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RESEARCH PRODUCT

Intrinsic and extrinsic point-defects in vapor transport grown ZnO bulk crystals

D. PfistererGerhard PenslDetlev M. HofmannBruno K. MeyerTh. FrankRamón Tena-zaeraJoachim SannVicente Muñoz-sanjosé

subject

Materials sciencePhotoluminescenceDeep-level transient spectroscopyAnnealing (metallurgy)Analytical chemistryCrystal structureCondensed Matter PhysicsCrystallographic defectElectronic Optical and Magnetic MaterialsNuclear magnetic resonanceCharge carrierElectrical and Electronic EngineeringSpectroscopyLuminescence

description

Vapor transport grown ZnO bulk crystals were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga, and oxygen vacancies in the material. Annealing the samples in O 2 at about 1000 °C (2 atm, 20 h) reduces the H and V O donor concentration by typical one order of magnitude. The photoluminescence and DLTS results suggest a correlation between the broad unstructured emission at 2.45eV (green band) and a donor level 530 meV below the conduction band (E4).

https://doi.org/10.1016/j.physb.2005.12.192