6533b7dbfe1ef96bd127131b

RESEARCH PRODUCT

Numerical study of the ZnO growth by MOCVD

Ramón Tena-zaeraVicente Muñoz-sanjoséJesús Zúñiga-pérezC. Martínez-tomás

subject

ChemistryDimethylzincchemistry.chemical_elementChemical vapor depositionZincDiethylzincCondensed Matter PhysicsOxygenInorganic ChemistryPropanolchemistry.chemical_compoundChemical engineeringHeat transferMaterials ChemistryPhysical chemistryMetalorganic vapour phase epitaxy

description

Abstract In order to analyze the growth of zinc oxide by metalorganic chemical vapor deposition, a numerical model has been developed to simulate the gas flow in a horizontal reactor. A two-inlet system, one for the Zn precursor and the other for the oxygen one, has been studied in the framework of this numerical simulation. This model takes into account the momentum conservation equation coupled with the heat transfer and mass transport of chemical species. Different Zn precursors, DiethylZinc (DEZn), DimethylZinc (DMZn) and DimethylZinc-TriethylAmine (DMZn-TEA) and oxygen precursors, ( tert -butanol, iso -propanol and acetone) as well as carrier gases (H 2 and N 2 ) have been considered. The effects of simulated experimental conditions on the fluid dynamics inside the reactor and, consequently, on the growth rate of ZnO layers have been analyzed.

yearjournalcountryeditionlanguage
2004-03-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2003.12.077