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RESEARCH PRODUCT
Growth of ZnO crystals by vapour transport: Some ways to act on physical properties
C. J. Gómez-garcíaVicente Muñoz-sanjoseRamón Tena-zaeraC. Martínez-tomássubject
ChemistryAnnealing (metallurgy)NanotechnologyGeneral ChemistryCondensed Matter PhysicsAmpoulelaw.inventionChemical engineeringlawThermalSource materialGeneral Materials ScienceGraphiteCrystallizationWell-defineddescription
Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of as-grown ZnO crystals can be changed in a controlled way by an adequate combination of different growth conditions such as graphite covering of inner ampoule walls, thermal difference between source material and crystallization zone and additional gas (composition and pressure). In this frame some post-growth annealing processes can be avoided reducing the time and cost of processes. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-08-01 | Crystal Research and Technology |