6533b855fe1ef96bd12b1414
RESEARCH PRODUCT
Faceting and structural anisotropy of nanopatterned CdO(110) layers
Carmen MunueraCarmen OcalC. Martínez-tomásVicente Muñoz-sanjoséM. LaügtJesús Zúñiga-pérezsubject
Materials scienceGeneral Physics and AstronomySemiconductor growthEpitaxyMosaicityVapour phase epitaxial growthCadmium compound ; Semiconductor epitaxial layers ; II-VI semiconductors ; Semiconductor growth ; Vapour phase epitaxial growth ; MOCVD ; Nanopatterning ; Self-assembly ; Lattice constants ; Mosaic structure ; Surface morphologyLattice constant:FÍSICA [UNESCO]PerpendicularMetalorganic vapour phase epitaxyAnisotropyCondensed matter physicsUNESCO::FÍSICASemiconductor epitaxial layersLattice constantsNanopatterningII-VI semiconductorsSelf-assemblyFacetingCrystallographyCadmium compoundMOCVDSapphireSurface morphologyMosaic structuredescription
CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consists of a regular ridge-and-valley structure which defines, again, a preferential in-plane direction. The grooves run parallel to the CdO[001] axis and exhibit lateral surfaces sloped at 28° with respect to the (110) surface. The influence of growth temperature and VI∕II molar ratio on the anisotropic mosaicity and morphology has been analyzed. Vicente.Munoz@uv.es Jesus.Zuniga@uv.es Carmen.Martinez-Tomas@uv.es
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-08-01 |