6533b828fe1ef96bd1288337
RESEARCH PRODUCT
Near band edge recombination mechanisms in GaTe
Vicente Muñoz-sanjoséJosé ÁNgel GarcíaA. ZubiagaFernando PlazaolaC. Martínez-tomássubject
PhotoluminescenceMaterials scienceBand gapExcitonEdge (geometry)Atomic physicsPower lawExcitationRecombinationIntensity (heat transfer)description
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL) response for different excitation intensities at energies higher than the band gap. The PL intensity variation of recombination peaks as a function of the excitation intensity has been measured and fitted by a power law. The results show some particular features that do not appear in other III-V and II-VI compound semiconductors. These features can be interpreted by means of the recombination dynamics of the carriers in the band-gap edges. The expressions for the coefficients associated with different recombination rates and the relations between them are derived and used for understanding the recombination mechanisms. The effect of an active donor level as a trap of free carriers is emphasized as a limiting element for the presence of excitons.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-12-17 | Physical Review B |