6533b855fe1ef96bd12b068e
RESEARCH PRODUCT
Thermal Creation of Defects in GaTe
Fernando PlazaolaJose-angel GarcíaA. ZubiagaVicente Muñoz-sanjoseC. Martínez-tomássubject
Materials sciencePhotoluminescencePhysics and Astronomy (miscellaneous)business.industryInfraredAnnealing (metallurgy)Melting temperatureGeneral EngineeringGeneral Physics and AstronomyOptically activeSpectral lineThermalOptoelectronicsbusinessRecombinationdescription
Photoluminescence spectra of as-grown and annealed GaTe single crystals in the 0.7–1.8 eV range have been analyzed at different temperatures. Annealing up to 200 °C produces an increase in the recombination intensity of an excitonic characteristic. The annealing at 400 °C generates an intense optically active recombination in the infrared region (0.76 eV). The thermal generation of defects is possible, owing to the low melting temperature of GaTe (800 °C).
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-12-19 | Japanese Journal of Applied Physics |