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RESEARCH PRODUCT
Determination of defect content and defect profile in semiconductor heterostructures
A. ZubiagaJosé ÁNgel GarcíaFernando PlazaolaJesús Zúñiga-pérezVicente Muñoz-sanjosésubject
HistoryMaterials sciencebusiness.industryAnalytical chemistryComputer Science ApplicationsEducationPositron annihilation spectroscopyCondensed Matter::Materials ScienceContent (measure theory)SapphireOptoelectronicsPoint (geometry)businessLayer (electronics)Doppler broadeningSemiconductor heterostructuresdescription
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-01-10 | Journal of Physics: Conference Series |