0000000000501997
AUTHOR
Edijs Kauranens
showing 7 related works from this author
Cryogenic nanoelectromechanical switch enabled by Bi2Se3 nanoribbons
2022
Abstract Nanoelectromechanical (NEM) switches are potential candidates for memory and logic devices for low standby-current and harsh environment applications. Cryogenic operation of these devices would allow to use them, e.g., in space probes and in conjunction with quantum computers. Herein, it is demonstrated that cryogenic application requirements such as good flexibility and conductivity are satisfied by using Bi2Se3 nanoribbons as active elements in NEM switches. Experimental proof of principle NEM switching at temperatures as low as 5 K is achieved in volatile and non-volatile reversible regimes, exhibiting distinct ON and OFF states, backed by theoretical modelling. The results open…
Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in ther…
2021
This work was supported by the European Regional Development Fund (ERDF) project No 1.1.1.1/16/A/257. J. A. acknowledges the ERDF project No. 1.1.1.2/1/16/037. Institute of Solid State Physics, University of Latvia, Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017 TeamingPhase2 under grant agreement No. 739508, project CAMART2 . The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form a part of an ongoing study.
High-Yield Growth and Tunable Morphology of Bi2Se3 Nanoribbons Synthesized on Thermally Dewetted Au
2021
The yield and morphology (length, width, thickness) of stoichiometric Bi2Se3 nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8–150 nm formed by dewetting Au layers of thicknesses 1.5–16 nm. The highest yield of the Bi2Se3 nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times. The mean lengths and thicknesses of the Bi2Se3 nanoribbons are directly proportional to the mean diameters of Au catalyst nanoparticles. In contrast, the me…
Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods
2020
Size distribution, Young&rsquo
Magnetotransport Studies of Encapsulated Topological Insulator Bi2Se3 Nanoribbons
2022
This research was funded by the Latvian Council of Science, project “Highly tunable surface state transport in topological insulator nanoribbons”, No. lzp-2020/2-0343, and by the European Union’s Horizon 2020 research and innovation program, Grant Agreement No. 766714/ HiTIMe. Institute of Solid-State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.
Effect of graphene substrate type on formation of Bi2Se3 nanoplates
2019
AbstractKnowledge of nucleation and further growth of Bi2Se3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi2Se3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as refer…
Piecpadsmitās grupas metālu halkogenīdu plāno kārtiņu sintēze, fizikālo īpašību raksturojums un pielietojums termoelektriskās ierīcēs
2019
Termoelektriskie ģeneratori ir ierīces, kuras, pastāvot temperatūras gradientam, spēj ražot elektrisko strāvu. Jeb vienkāršiem vārdiem sakot, šīs ierīces siltumu pārvērš elektrībā. Tas ir ērts veids, kā nelietderīgi radušos siltumu jebkuros citos procesos pārveidot vēlamā elektriskajā enerģijā. Taču mūsdienās šādas ietaises ir reti sastopamas to zemās lietderības un citu faktoru dēļ. Termoelektriskie ģeneratori visbiežāk sastāv no atsevišķu n un p tipa pusvadītāju elementu dažādiem slēgumiem, lai pēc nepieciešamības palielinātu izejas strāvu un spriegumu. Šajā gadījumā tiek apskatīts n tipa bismuta selenīda un p tipa antimona telurīda virknes slēgums dažādās konfigurācijās attiecībā pret te…