Strain effects in phosphorus bound exciton transitions in silicon
Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detection. As these electrodes will inevitably cause strain in the silicon lattice, it will be crucial to understand how strain affects the exciton transitions. Here we study the phosphorous donor bound exciton transitions in silicon using hybrid electro-optical readout with microfabricated electrodes. W…
The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon
Abstract Optomechanical resonators were fabricated on a silicon-on-insulator substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 K and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice struc…