0000000000527049
AUTHOR
Agnello Simonpietro
showing 3 related works from this author
MICROSCOPIC TECHNIQUES AND A MULTI-ANALYTICAL APPROACH TO CHARACTERIZE THE MATERIALS OF TWO RUSSIAN ICONS
2018
Two 19th century Russian icons, from the Museo Diocesano of Palermo, were analysed by UV photography, X-ray fluorescence, energy-dispersive X-ray fluorescence (ED-XRF), optical microscopy, micro-Raman spectroscopy and Scanning Electron Microscopy, combined with energy dispersive x-ray analysis, (SEM/EDS). The multi-analytical study of the icons “Protezione della Madre di Dio” (Pokrov’s Icon, Protection of Holy Mother of God) and ‘’Madre di Dio Gioia di Tutti gli Afflitti’’, (Holy Mother of God, Joy of all the afflicted), have been performed to reveal materials and technological features of the original painting of the 19th century as well as the materials used during past restoration works.…
Irradiation Effects in Optical Fibers
2010
Intrinsic and extrinsic optical fiber-based sensors are promising devices to be used in very different and complex environments, by their very nature: capabilities to work under electromagnetic fields; possibility to carry multiplexed signals (time, wavelength multiplexing); small size and low mass; ability to handle multi-parameter measurements in distributed configuration; possibility to monitor sites far away from the controller. In the case of the optical fibers, the possibility to be incorporated into various types of sensors and actuators, free of additional hazards (i.e. fire, explosion), made them promising candidates to operate in adverse conditions as those required by space appli…
Impact of contact resistance on the electrical properties of MoS
2016
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) a…