0000000000528209
AUTHOR
C. Grigson
Recent results from the ATLAS SCT irradiation programme
Abstract The irradiation facility at the CERN proton synchrotron, set up to irradiate full-size prototypes of silicon microstrip detectors for the ATLAS semiconductor tracker, is described and measurements of the detector currents during irradiation are reported. The detector dark currents can be described by bulk radiation damage models demonstrating the radiation hardness of the detector design and allowing the current damage factor α and the acceptor introduction term β to be determined. Results from testbeam studies of a module with an irradiated detector and binary readout in a magnetic field and with the beam incident over a range of angles are reported. The hit efficiency and spatial…
Radiation-hard semiconductor detectors for SuperLHC
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…
Silicon microstrip detectors for the ATLAS SCT
Abstract The ATLAS Semiconductor Tracker at the Large Hadron Collider (LHC) will incorporate ∼20,000 individual silicon microstrip sensors representing ∼60 m 2 of silicon. Production and delivery of the sensors is already underway and scheduled for completion by late 2002. The sensors have been optimised for operation in the harsh radiation environment of the LHC, and subjected to an extensive qualification program in which their pre- and post-irradiation characteristics have been evaluated. The sensor design features are reviewed, together with their electrical characteristics and the Quality Control procedures adopted by ATLAS during production.