Half-Heusler superlattices as model systems for nanostructured thermoelectrics
The efficiency of thermoelectric materials is directly related to the dimensionless figure of merit , therefore, one of the means to improve ZT is to reduce the thermal conductivity. Our research focuses on half-Heusler superlattices (SLs) and the relationship between the SL period and the thermal conductivity. The cross-plane thermal conductivity of DC-sputtered TiNiSn/HfNiSn SLs was measured by the 3 method at room temperature and a clear reduction of was achieved for all SL periods, in particular for periods smaller than 20 nm. Moreover, the thermal conductivities of TiNiSn and HfNiSn single films display reduced values compared to the literature data for bulk materials. Furthermore, we …
Thermal conductivity of thermoelectric Al-substituted ZnO thin films
ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…
Tuning the carrier concentration for thermoelectrical application in the quaternary Heusler compound Co2TiAl(1−x)Six
The family of half-metallic ferromagnets Co2TiZ exhibits exceptional transport properties. The investigated compounds Co2TiAl(1−x)Six (x = 0.25, 0.5, 0.75) show Curie temperatures (TCs) that vary between 250 and 350 K, depending on the composition. Above TC the Seebeck coefficient remains constant. This makes them promising candidates for thermoelectric devices such as thermocouples with a tunable working range. The electrical resistivity data show an anomaly at TC which is attributed to changes in the electronic structure and therefore in the carrier concentration.
Thermal conductivity of half-Heusler superlattices
Thin films and superlattices (SLs) of TiNiSn and ZrHfNiSn layers have been grown by dc magnetron sputtering on MgO (100) substrates to reduce the thermal conductivity, aiming for improvement of the thermoelectric figure of merit ZT. The thermal conductivity of 1 Wm−1K−1 was measured by the differential 3ω method for an SL with a periodicity of 8.8 nm. In addition to x-ray diffraction analysis of the SL crystal structure, smooth interfaces were confirmed by scanning/transmission electron microscopy.