0000000000585707
AUTHOR
Rémi Tucoulou
Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…
Characterization of single semiconductor nanowires by synchrotron radiation nanoprobe
In this work, we report on the results of the characterization of single semiconductor nanowires by x-ray fluorescence nanoprobe. Wurtzite InGaN and Co-implanted ZnO single nanowires were studied. Ternary semiconductor nanowires show an axial inhomogeneous elemental distribution, with Ga accumulating at the bottom and In at the top of the wires. The ZnO NWs, on the other hand, show a homogeneous distribution of the Co implanted along the nanowires, without signatures of clustering or segregation effects induced by the implantation. No signatures of unintentional doping are observed neither in the InGaN nor the ZnO NWs. These overall results demonstrate the suitability of X-ray fluorescence …