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RESEARCH PRODUCT

Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

J. MalindretosGema Martínez-criadoM. Gómez-gómezChristian DenkerA. RizziJuan Angel SansJ. Segura-ruizAndrés CantareroRémi TucoulouNúria GarroI. SnigirevaPeter Cloetens

subject

010302 applied physicsX-ray nanoprobePhotoluminescenceChemistryAnalytical chemistryNanowireNanoprobe02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsEpitaxy01 natural sciencessymbols.namesake0103 physical sciencessymbolsGeneral Materials Science0210 nano-technologyRaman spectroscopyRaman scatteringMolecular beam epitaxy

description

Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibit relevant signatures of the compositional disorder. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

https://doi.org/10.1002/pssr.201004527