Optical properties of nitride nanostructures

2010

In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…

Physical properties and applications of InxGa1−xN nanowires

2014

We have successfully grown InxGa1−xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1−xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowi…

Spontaneous core–shell elemental distribution in In-rich In(x)Ga1-xN nanowires grown by molecular beam epitaxy.

2014

International audience; The elemental distribution of self-organized In-rich InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy has been investigated using three different techniques with spatial resolution on the nanoscale. Two-dimensional images and elemental profiles of single nanowires obtained by x-ray fluorescence and energy-dispersive x-ray spectroscopy, respectively, have revealed a radial gradient in the alloy composition of each individual nanowire. The spectral selectivity of resonant Raman scattering has been used to enhance the signal from very small volumes with different elemental composition within single nanowires. The combination of the three techniques ha…

An advance Towards the Synthesis of Ag Nanorod Arrays with Controlled Surface Roughness for SERS Substrates

2016

An innovative approach to produce silver nanorod (NRs) arrays with controlled morphological parameters and surface roughness is presented. The Ag NRs were obtained using a three-stage fabrication process based on the electron beam exposure of a metal-polymer nanocomposite resist on a transparent substrate and development, a post bake and then a series of non-electrochemical metallization steps. After each step the evolution of the Ag NRs was characterized by scanning electron microscopy (SEM) for morphology and optical transmittance (T) measurements for Localized Surface Plasmon Resonance (LSPR). The transmittance measurements were interpreted using models based on the Finite Element Method…

Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

2011

Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

2013

Strain effects and phonon-plasmon coupled modes in Si-doped AlN

2009

The E 2h and A 1 (LO) phonon modes of AlN films grown on sapphire are analyzed by Raman scattering as a function of silicon doping for concentrations covering from 5.5 x 10 19 cm ―3 to 5.2 x 10 21 cm ―3 . For high doping levels the appearance of a mode around 520 cm ―1 indicates the precipitation of crystalline silicon in the samples and its inhomogeneous incorporation to the AlN layer. The frequency of this mode shifts to lower energies with doping, indicating that the silicon crystals are embedded in the AlN lattice and under tensile strain. On the other hand, the AlN phonon modes are blue-shifted due to the compressive strain as a result of the silicon incorporation. This strain is parti…

Characterization of single semiconductor nanowires by synchrotron radiation nanoprobe

2012

In this work, we report on the results of the characterization of single semiconductor nanowires by x-ray fluorescence nanoprobe. Wurtzite InGaN and Co-implanted ZnO single nanowires were studied. Ternary semiconductor nanowires show an axial inhomogeneous elemental distribution, with Ga accumulating at the bottom and In at the top of the wires. The ZnO NWs, on the other hand, show a homogeneous distribution of the Co implanted along the nanowires, without signatures of clustering or segregation effects induced by the implantation. No signatures of unintentional doping are observed neither in the InGaN nor the ZnO NWs. These overall results demonstrate the suitability of X-ray fluorescence …