0000000000596132
AUTHOR
A. P. Halvari
showing 2 related works from this author
Method for finding the critical temperature of the island in a SET structure
2008
We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have used this method to determine the superconducting phase transition temperature of the Nb island of an superconducting single electron transistor with Al leads. We obtain $T_\mathrm{c}^\mathrm{Nb}$ as high as 8.5 K and gap energies up to $\Delta_\mathrm{Nb}\simeq 1.45$ meV. By looking at the zero bias conductance as a function of magnetic field instead of temperature, also the critical field of the island can be determined. Using the orthodox theory, we have …
Cooper-pair resonances and subgap Coulomb blockade in a superconducting single-electron transistor
2003
We have fabricated and measured superconducting single-electron transistors with Al leads and Nb islands. At bias voltages below the gap of Nb we observe clear signatures of resonant tunneling of Cooper pairs, and of Coulomb blockade of the subgap currents due to linewidth broadening of the energy levels in the superconducting density of states of Nb. The experimental results are in good agreement with numerical simulations.