Effect of Er3+-doping on 65GeS2-25Ga2S3-10CsCl glass probed by annihilating positrons
Abstract Effect of Er3+-doping resulting in pronounced mid-IR fluorescence functionality was examined first in chalcohalide 65GeS2-25Ga2S3-10CsCl glass using positron annihilation lifetime (PAL) spectroscopy. The detected PAL spectra were reconstructed from unconstrained x2-term analysis employing two-state simple trapping model for one kind of positron trapping free-volume defects, the parameterization being performed at the example of 65GeS2-25Ga2S3-10CsCl glass doped with 0.6 at. % of Er3+. The observed decrease in positron trapping rate was proved to be primary void-evolution process in this Er-activated glass, like in many other chalcogenide glasses affected by rare earth doping. The n…
Positron annihilation probing of crystallization effects in TAS-235 glass affected by Ga additions
Abstract Crystallization effects in Te20As30Se50 glass known also as TAS-235 affected by Ga additions to Ga2Te20As28Se50 and Ga5Te20As25Se50 compositions are probed with positron annihilation spectroscopy in the measuring modes exploring positron lifetimes and Doppler broadening of annihilation line. Occurring of cubic-phase Ga2Se3 droplets with character nanoscale sizes in partially-crystallized Ga2Te20As28Se50 alloy is shown to be associated with agglomeration of intrinsic free-volume voids, this process being enhanced over microcrystalline scale in Ga5Te20As25Se50 alloy. Crystallization changes in the void structure of TAS-235 glass are considered in terms of free-volume evolution under …