6533b826fe1ef96bd12847a4
RESEARCH PRODUCT
Effect of Er3+-doping on 65GeS2-25Ga2S3-10CsCl glass probed by annihilating positrons
Oleh ShpotyukLaurent CalvezVictor KadanAdam IngramI. BlonskyiYaroslav ShpotyukYaroslav ShpotyukRoman Szataniksubject
positron trapping reductionPhotoluminescenceMaterials scienceChalcogenide02 engineering and technologyTrapping010402 general chemistry01 natural sciencesMolecular physicsSpectral lineInorganic Chemistrychemistry.chemical_compoundPositron[CHIM]Chemical SciencesElectrical and Electronic EngineeringPhysical and Theoretical ChemistrySpectroscopyComputingMilieux_MISCELLANEOUSSpectroscopyOrganic ChemistryDoping021001 nanoscience & nanotechnologyFluorescenceAtomic and Molecular Physics and Opticschalcohalide glass0104 chemical sciencesElectronic Optical and Magnetic Materialschemistryrare earth dopingphotoluminescence0210 nano-technologydescription
Abstract Effect of Er3+-doping resulting in pronounced mid-IR fluorescence functionality was examined first in chalcohalide 65GeS2-25Ga2S3-10CsCl glass using positron annihilation lifetime (PAL) spectroscopy. The detected PAL spectra were reconstructed from unconstrained x2-term analysis employing two-state simple trapping model for one kind of positron trapping free-volume defects, the parameterization being performed at the example of 65GeS2-25Ga2S3-10CsCl glass doped with 0.6 at. % of Er3+. The observed decrease in positron trapping rate was proved to be primary void-evolution process in this Er-activated glass, like in many other chalcogenide glasses affected by rare earth doping. The nature of this effect was explained in terms of positron trapping reduction model as competitive contribution of changed occupancy sites in Ga-modified glassy matrix available for rare earth ions and annihilating positrons.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-02-01 | Optical Materials |