0000000000076544
AUTHOR
Oleh Shpotyuk
Free-volume Study in GeS2-Ga2S3-CsCl Chalcohalide Glasses Using Positron Annihilation Technique
Abstract Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in Ge-Ga-S glasses having different amount of CsCl additives. It is shown that the structural changes caused by CsCl additives can be adequately described by positron trapping modes determined within two-state model. The results testify in a favor of rather unchanged nature of corresponding free-volume voids responsible for positron trapping in the studied glasses, when mainly concentration of these traps is a subject to most significant changes with composition.
Positronics of radiation-induced effects in chalcogenide glassy semiconductors
Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
Structural-relaxation phenomena in As–S glasses as probed by combined PAL/DBAR technique
Abstract Experimental techniques exploring phenomena of positron–electron interaction, namely the positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation, are shown to be very informative tools to study radiation- and thermally-induced phenomena in chalcogenide glasses of binary As–S system. Time-dependent processes of free-volume voids agglomeration (expansion), fragmentation (refining) and disappearing (contraction) are identified as main stages of physical aging in S-rich glasses, while a competitive channel of coordination topological defects formation associated with void charging becomes significant in a vicinity of near-stoichiometric glass compos…
Effect of Er3+-doping on 65GeS2-25Ga2S3-10CsCl glass probed by annihilating positrons
Abstract Effect of Er3+-doping resulting in pronounced mid-IR fluorescence functionality was examined first in chalcohalide 65GeS2-25Ga2S3-10CsCl glass using positron annihilation lifetime (PAL) spectroscopy. The detected PAL spectra were reconstructed from unconstrained x2-term analysis employing two-state simple trapping model for one kind of positron trapping free-volume defects, the parameterization being performed at the example of 65GeS2-25Ga2S3-10CsCl glass doped with 0.6 at. % of Er3+. The observed decrease in positron trapping rate was proved to be primary void-evolution process in this Er-activated glass, like in many other chalcogenide glasses affected by rare earth doping. The n…
Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses
Abstract Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS 2 –20Ga 2 S 3 ) 85 (СsCl) 15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defe…
Positron annihilation probing of crystallization effects in TAS-235 glass affected by Ga additions
Abstract Crystallization effects in Te20As30Se50 glass known also as TAS-235 affected by Ga additions to Ga2Te20As28Se50 and Ga5Te20As25Se50 compositions are probed with positron annihilation spectroscopy in the measuring modes exploring positron lifetimes and Doppler broadening of annihilation line. Occurring of cubic-phase Ga2Se3 droplets with character nanoscale sizes in partially-crystallized Ga2Te20As28Se50 alloy is shown to be associated with agglomeration of intrinsic free-volume voids, this process being enhanced over microcrystalline scale in Ga5Te20As25Se50 alloy. Crystallization changes in the void structure of TAS-235 glass are considered in terms of free-volume evolution under …
Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses
H. Klym thanks to the Ministry of Education and Science of Ukraine for support and Dr. P. Demchenko for the assistance in XRD experiments.
'Cold' crystallization in nanostructurized 80GeSe2-20Ga2Se3 glass
International audience; 'Cold' crystallization in 80GeSe 2-20Ga 2 Se 3 chalcogenide glass nanostructurized due to thermal annealing at 380°C for 10, 25, 50, 80, and 100 h are probed with X-ray diffraction, atomic force, and scanning electron microscopy, as well as positron annihilation spectroscopy performed in positron annihilation lifetime and Doppler broadening of annihilation line modes. It is shown that changes in defect-related component in the fit of experimental positron lifetime spectra for nanocrystallized glasses testify in favor of structural fragmentation of larger free-volume entities into smaller ones. Nanocrystallites of Ga 2 Se 3 and/or GeGa 4 Se 8 phases and prevalent GeSe…