6533b7d4fe1ef96bd12627ef
RESEARCH PRODUCT
Positronics of radiation-induced effects in chalcogenide glassy semiconductors
Mikhailo ShpotyukAdam IngramSergey KozyukhinSergey KozyukhinRoman SzatanikOleh Shpotyuksubject
Materials scienceAbsorption spectroscopyChalcogenidePositron Lifetime SpectroscopyAnalytical chemistryCondensed Matter PhysicsMolecular physicsAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsPositron annihilation spectroscopychemistry.chemical_compoundPositronполупроводникиAbsorption edgechemistryпозитронная аннигиляционная спектроскопияSpectroscopyDoppler broadeningdescription
Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-03-01 | Semiconductors+ |