0000000000599137
AUTHOR
Uwe Siegner
showing 3 related works from this author
Robust single-parameter quantized charge pumping
2008
This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable source of quantized current.
Single-parameter quantized charge pumping in high magnetic fields
2008
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.
Realization of a robust single-parameter quantized charge pump
2008
This paper describes a novel scheme for quantized charge pumping based on single-parameter modulation. The device is realized in an AlGaAs-GaAs gated nanowire. A particular advantage of this realization is that operation in the quantized regime can be achieved in a potentially large range of amplitude and dc off-set of the driving signal. This feature together with the simple configuration might enable large scale parallel operation of many such devices.