P-on-N and N-on-P silicon photomultipliers: responsivity comparison in the continuous wave regime

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse b…

Responsivity measurements of SiC photodiodes

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.

N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime

We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.

Responsivity measurements of SiC Schottky photodiodes

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.

Electro-Optical characterization of Silicon Carbide Schottky photodiodes

Measurements of Silicon Photomultipliers Responsivity

We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave

P-on-N and N-on-P silicon photomultipliers: an in-depth analysis in the continuous wave regime

We report on the electrical and optical comparison, in the continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type (N-on-P class) and N-type (P-on-N class) substrates respectively.