Monte Carlo Simulation of Spin Relaxation of Conduction Electrons in Silicon

2014

Recently, electrical injection of spin polarization in n-type and p-type silicon up to room-temperature has been experimental- ly carried out. Despite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In this contribution we use a semiclassical multiparti- cle Monte Carlo approach to simulate the electron transport and spin dynamics in lightly doped n-type Si crystals and numerically calculate the spin lifetimes of drifting electr…

HOT-ELECTRON NOISE FEATURES IN SILICON CRYSTALS OPERATING UNDER PERIODIC SIGNALS

2014

We study the intrinsic noise in n-type Si crystals operating under high-frequency periodic electric fields. To simulate the dy- namics of electrons in the bulk, by taking into account the main details of band structure, scattering processes, as well as heating effects, a Monte Carlo approach is used. The noise properties are investigated by computing the velocity fluctuations correlation function, its spectral density, and the total noise power for different values of the amplitude and frequency of the driving field. We show that the noise features are significantly affected by the electric field amplitude and frequency and discuss their peculiari- ties in comparison with those exhibited in…

External Noise Effects in Silicon MOS Inversion Layer

2013

The effect of the addition of an external source of correlated noise on the electron transport in silicon MOS inversion layer, driven by a static electric field, has been investigated. The electron dynamics is simulated by a Monte Carlo procedure which takes into account non-polar optical and acoustic phonons. In our modelling of the quasi-two-dimensional electron gas, the potential profile, perpendicular to the MOS structure, is assumed to follow the triangular potential approximation. We calculate the changes in both the autocorrelation function and the spectral density of the velocity fluctuations, at different values of noise amplitude and correlation time. The findings indicate that, t…

Noise-Induced Effects on electron transport in Silicon Structures