Monte Carlo Simulation of Spin Relaxation of Conduction Electrons in Silicon

Recently, electrical injection of spin polarization in n-type and p-type silicon up to room-temperature has been experimental- ly carried out. Despite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In this contribution we use a semiclassical multiparti- cle Monte Carlo approach to simulate the electron transport and spin dynamics in lightly doped n-type Si crystals and numerically calculate the spin lifetimes of drifting electr…