0000000000613598
AUTHOR
A. Johansen
Annealing reactions in lead implanted copper
Abstract The terminal solubility of Pb in Cu is extremely low and does not exceed 0.09 at.% at 875 K. Ion implantation of lead ions at 100 keV into Cu single crystals produces metastable solutions. Annealing of the samples causes redistribution of the implanted atoms to equilibrium or near-equilibrium aggregate states which may be reflected in a change in the type of impurity lattice location in the host matrix. We have studied the effect of annealing on single crystalline Cu implanted at temperatures around 375 K with Pb to a concentration of a 1–2 at.%. Rutherford backscattering/channeling analysis and transmission electron microscopy of the as-implanted samples have shown that the implan…
High-Fluence Implantation of Erbium into Silicon-Germanium Alloys: Structural and Thermal Properties
AbstractHigh-quality crystalline Si1-xGex (x=0.10 and 0.25) alloys were implanted with 70 keV Er+ ions at temperatures of 350°C and 550°C to a fluence of 1015 cm−2. In-situ Rutherford backscattering/channeling (RBS) analysis supplemented with transmission electron microscopy (TEM) showed that as-implanted alloys were in form of ternary solid solutions with a peak Er concentration of 1 at.% without any trace of Er-Si or Er-Ge precipitation.In the samples implanted at 350°C Er atoms were found to be distributed randomly in the amorphous host matrix. Post-implantation annealing at different temperatures up to 600° showed that the solid phase epitaxial regrowth of the damaged layers strongly de…