0000000000622776
AUTHOR
R. Pykhov
showing 2 related works from this author
Line mixing in the stimulated Raman spectrum of the ν1 band of SiH4 at 0.4-1.0 bar
1993
International audience; The stimulated Raman spectrum of the ν1 band of SiH4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.
Line mixing in the stimulated Raman spectrum of the ν1 band of SiH4 at 0.4–1.0 bar
1993
The stimulated Raman spectrum of the ν1 band of SiH4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.