0000000000622776
AUTHOR
R. Pykhov
Line mixing in the stimulated Raman spectrum of the ν1 band of SiH4 at 0.4-1.0 bar
International audience; The stimulated Raman spectrum of the ν1 band of SiH4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.
Line mixing in the stimulated Raman spectrum of the ν1 band of SiH4 at 0.4–1.0 bar
The stimulated Raman spectrum of the ν1 band of SiH4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.