0000000000631499
AUTHOR
Christian Lidig
Surface resonance of thin films of the Heusler half-metal Co2MnSi probed by soft x-ray angular resolved photoemission spectroscopy
Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of AlOx capped epitaxial thin films of the ferromagnetic half-metal Co2MnSi ex situ by soft x-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX-ARPES results and photoemission calculations including surface effects was obtained. In particular, we observed in line with our calculations a large photoemission intensity at the center of the Brillouin zone, which does not originate from bulk states, but from a surface resonance. This provides strong evidence f…
Band structure tuning of Heusler compounds: Spin- and momentum-resolved electronic structure analysis of compounds with different band filling
Physical review / B 103(5), 054407 (2021). doi:10.1103/PhysRevB.103.054407
Surface resonance of thin films of the Heusler half-metal Co2MnSi probed by soft x-ray angular resolved photoemission spectroscopy
Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of ${\mathrm{AlO}}_{x}$ capped epitaxial thin films of the ferromagnetic half-metal ${\mathrm{Co}}_{2}\mathrm{MnSi}$ ex situ by soft x-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX-ARPES results and photoemission calculations including surface effects was obtained. In particular, we observed in line with our calculations a large photoemission intensity at the center of the Brillouin zone, which does not originate from bulk states, but from a surface r…
Unidirectional Spin Hall Magnetoresistance as a Tool for Probing the Interfacial Spin Polarization of Co2MnSi
Materials with high spin polarization, such as Heusler compounds, are required for efficient spintronics. The authors propose an approach to probe the transport spin polarization at interfaces, using the recently discovered unidirectional spin Hall magnetoresistance. They show that insertion of thin Ag(001) layers clearly increases the interfacial spin polarization of the Heusler compound Co${}_{2}$MnSi, which is crucial for giant-magnetoresistance devices.