0000000000644573

AUTHOR

Kimmo Niskanen

0000-0003-1083-1273

showing 2 related works from this author

Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

2021

International audience; Functional verification schemes at a level different from component-level testing are emerging as a cost-effective tool for those space systems for which the risk associated with a lower level of assurance can be accepted. Despite the promising potential, system-level radiation testing can be applied to the functional verification of systems under restricted intrinsic boundaries. Most of them are related to the use of hadrons as opposed to heavy ions. Hadrons are preferred for the irradiation of any bulky system, in general, because of their deeper penetration capabilities. General guidelines about the test preparation and procedure for a high-level radiation test ar…

Small satelllitessmall satellitesComputer scienceRadiation effects02 engineering and technologytest methodology01 natural sciencesSpace missionsSpace explorationsystem-level testing0202 electrical engineering electronic engineering information engineeringRadiation hardeningTechnik [600]Reliability (statistics)avaruustekniikka[PHYS]Physics [physics]protonselektroniikkalaitteetrisk acceptance[PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph]Commercial off-the-shelf (COTS)Test (assessment)facilitiesPerformance evaluationTotal ionizing doseSystem verificationtestmethodologyNuclear and High Energy Physicstotal ionizing dose (TID)0103 physical scienceselektroniikkaRadiation hardening (electronics)Electrical and Electronic Engineeringsingle-event effect (SEE)Functional verification010308 nuclear & particles physics600: Technikneutrons020206 networking & telecommunicationsTest methodSystem level testingReliability engineering[SPI.TRON]Engineering Sciences [physics]/ElectronicsNuclear Energy and EngineeringtestausmenetelmätsäteilyfysiikkaOrbit (dynamics)radiation hardness assurancejärjestelmätddc:600
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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

2020

International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.

Nuclear and High Energy PhysicsMaterials scienceRadiation effectsSilicon carbide[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]Stress01 natural sciencesNeutron effectsSilicon carbide (SiC)Stress (mechanics)Semiconductor device modelschemistry.chemical_compoundMOSFETReliability (semiconductor)0103 physical sciencesMOSFETSilicon carbideBreakdown voltageSemiconductor device breakdownSilicon compoundsSingle Event BurnoutNeutronIrradiationElectrical and Electronic EngineeringPower MOSFETPower MOSFETComputingMilieux_MISCELLANEOUSElectric breakdownNeutrons[PHYS]Physics [physics]010308 nuclear & particles physicsbusiness.industryLogic gatesWide band gap semiconductorsSemiconductor device reliability[SPI.TRON]Engineering Sciences [physics]/ElectronicsNuclear Energy and Engineeringchemistry13. Climate actionSingle-event burnout (SEB)Atmospheric neutronsOptoelectronicsbusinessTechnology CAD (electronics)
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