6533b860fe1ef96bd12c3a93
RESEARCH PRODUCT
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
Kimmo NiskanenArto JavanainenAntoine TouboulVincent PougetA. MichezFrédéric WrobelJerome BochFrédéric SaignéR. Coq Germanicussubject
Nuclear and High Energy PhysicsMaterials scienceRadiation effectsSilicon carbide[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]Stress01 natural sciencesNeutron effectsSilicon carbide (SiC)Stress (mechanics)Semiconductor device modelschemistry.chemical_compoundMOSFETReliability (semiconductor)0103 physical sciencesMOSFETSilicon carbideBreakdown voltageSemiconductor device breakdownSilicon compoundsSingle Event BurnoutNeutronIrradiationElectrical and Electronic EngineeringPower MOSFETPower MOSFETComputingMilieux_MISCELLANEOUSElectric breakdownNeutrons[PHYS]Physics [physics]010308 nuclear & particles physicsbusiness.industryLogic gatesWide band gap semiconductorsSemiconductor device reliability[SPI.TRON]Engineering Sciences [physics]/ElectronicsNuclear Energy and Engineeringchemistry13. Climate actionSingle-event burnout (SEB)Atmospheric neutronsOptoelectronicsbusinessTechnology CAD (electronics)description
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
year | journal | country | edition | language |
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2020-07-01 |