0000000000659762
AUTHOR
A. Aouizerat
Semiconductor-metal transitions in liquidIn100−xSexalloys: A concentration-induced transition
The electronic and structural properties of ${\mathrm{In}}_{100\ensuremath{-}x}{\mathrm{Se}}_{x}$ liquid alloys close to their melting points have been investigated by combining x-ray-absorption experiments with ab initio molecular-dynamics simulations. Extended x-ray-absorption fine-structure data have been acquired at both the In and Se K edges in a large concentration range $(x=20%$ to $x=50%$ of Se content). Ab initio molecular-dynamics simulations have been carried out at the two most extreme concentrations explored experimentally. Liquid InSe is found to retain a semiconducting behavior which results from a low-dimensional structure, reminiscent of that of the ambient solid phase, cha…
High pressure–high temperature phase diagram of InSe
By combining X-ray diffraction and X-ray absorption spectroscopy, the structural evolution of the InSe alloy has been explored up to 3.3 GPa and 1500 K with the use of the Paris–Edinburgh large volume cell. These conditions allowed us to study the solid and the liquid states and to measure the pressure evolution of the melting point, which increases at a rate of +120 K GPa−1. A temperature‐induced phase transition has been evidenced within the solid phase. This is the first in-situ study of the high temperature solid phase which had so far only been inferred from studies on recovered samples at ambient conditions.