0000000000696910
AUTHOR
Vladimir M. Fomin
Three-Dimensional Superconducting Nanohelices Grown by He+-Focused-Ion-Beam Direct Writing
Novel schemes based on the design of complex three-dimensional (3D) nanoscale architectures are required for the development of the next generation of advanced electronic components. He+ focused-ion-beam (FIB) microscopy in combination with a precursor gas allows one to fabricate 3D nanostructures with an extreme resolution and a considerably higher aspect ratio than FIB-based methods, such as Ga+ FIB-induced deposition, or other additive manufacturing technologies. In this work, we report the fabrication of 3D tungsten carbide nanohelices with on-demand geometries via controlling key deposition parameters. Our results show the smallest and highest-densely packed nanohelix ever fabricated s…
Theory of bound polarons in oxide compounds
We present a multilateral theoretical study of bound polarons in oxide compounds MgO and \alpha-Al_2O_3 (corundum). A continuum theory at arbitrary electron-phonon coupling is used for calculation of the energies of thermal dissociation, photoionization (optically induced release of an electron (hole) from the ground self-consistent state), as well as optical absorption to the non-relaxed excited states. Unlike the case of free strong-coupling polarons, where the ratio \kappa of the photoionization energy to the thermal dissociation energy was shown to be always equal to 3, here this ratio depends on the Froehlich coupling constant \alpha and the screened Coulomb interaction strength \beta.…
Critical current modulation induced by an electric field in superconducting tungsten-carbon nanowires
The critical current of a superconducting nanostructure can be suppressed by applying an electric field in its vicinity. This phenomenon is investigated throughout the fabrication and electrical characterization of superconducting tungsten-carbon (W-C) nanostructures grown by Ga+ focused ion beam induced deposition (FIBID). In a 45 nm-wide, 2.7 μm-long W-C nanowire, an increasing side-gate voltage is found to progressively reduce the critical current of the device, down to a full suppression of the superconducting state below its critical temperature. This modulation is accounted for by the squeezing of the superconducting current by the electric field within a theoretical model based on th…