0000000000698178
AUTHOR
Giannazzo F.
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)
This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses of 308 nm laser radiation (pulse duration of 160 ns), with fluence varying from 1.0 to 2.8 J/cm2. As a starting point, the laser-induced modifications of the morphological, microstructural, and nanoelectrical properties of the exposed 4H-SiC surface were monitored by combining different techniques. From these investigations, an evolution of the surface morphology was observed that can be ascribed to a conversion during irradiation of the uppermost part of the 4H-SiC …
Thermally induced doping in controlled atmosphere on Graphene
Since its experimental breakthrough discovery in 2004, Graphene (Gr) paved the way for the study of the "flatland" of two dimensional (2D) materials. These systems are an emerging topic of interest in solid state physics and amterial sciences, but nont only, and today count a family of monoatomic layer of C atoms in hexgonal honey comb crystalline structure.