0000000000702663
AUTHOR
A. Raman
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed