6533b82cfe1ef96bd128f8b1
RESEARCH PRODUCT
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
A. F. WitulskiR. ArslanbekovA. RamanR. D. SchrimpfA. SternbergK. F. GallowayArto JavanainenD. GriderD. J. LichtenwalnerB. Hullsubject
silicon carbidesingle-event burnoutthermal coefficients of silicon carbidepower diodessingle event effectsheavy ionsjunction barrier schottky (JBS) diodedescription
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon carbide lattice. peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-01-01 |