0000000000718039
AUTHOR
A. Lindell
A computer controlled patterning system for scanning probe microscopes
Abstract A pattern generator system for lithography based on scanning force microscopes has been developed. Patterns to be miniaturized onto a chip can be scanned or drawn by any common graphical program. The pattern file is used to control a voltage simultaneously with the microscope probe scanning the surface of the substrate. The voltage can be used in numerous different ways to manipulate the substrate, depending on the lithographic method preferred. We have demonstrated the system by adding this voltage to the z -piezo voltage of the scanner, in order to make the probe plow the pattern into a film spinned on the sample. To maintain linearity in zooming in and rotating the scanning dire…
Nano-lithography by electron exposure using an Atomic Force Microscope
Abstract We have used a conductive Atomic Force Microscope (AFM) tip to expose a very thin resist film. An exposing current of low energy electrons was induced from the tip to the substrate by applying a small bias voltage. Uniform resist films as thin as 10 nm were fabricated using the Langmuir–Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure was first defined by conventional electron beam lithography, either directly in the Langmuir–Blodgett resist film or in a separate first lift-off process with a thicker resist. The results from the one resist process gave conducting 50 nm lines with a 60 A thick vacuum depo…
Nano-lithography using a resist, patterned by electron exposure in an AFM configuration
We have used a metallised force microscope tip to apply a voltage and thereby expose a very thin resist film. It is possible to image the film surface before, during and after the exposure, without interference with the process. Uniform resist films as thin as 10 nm are fabricated using the Langmuir-Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure is first defined by conventional electron beam lithography, either directly in the Langmuir-Blodgett resist film or in a complete first process with a separate resist system. The results from the one resist process gave conducting 50 nm lines in a 60 A thick aluminium f…