0000000000723969

AUTHOR

D. Ravelosona

showing 2 related works from this author

Study of energetics of 360{\deg} domain walls through annihilation

2018

The Dzyaloshinskii-Moriya interaction (DMI) causes domain walls in perpendicular magnetized systems to adopt a homochiral configuration by winding in the same direction for both Up-Down and Down-Up walls. The topology of these domain walls is then distinct from the uniformly magnetized state. When two domain walls approach each other and are in close proximity they form winding pairs, stabilized by a dipolar repulsion. This can result in the formation of 360 {\deg} stable domain walls, whose stability is directly related to the magnitude of the additional dipolar interaction resulting from the spin structure governed by the DMI. Application of an external magnetic field can overcome the dip…

Condensed Matter - Mesoscale and Nanoscale Physics
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Magnetic domain-wall racetrack memory for high density and fast data storage

2012

The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm …

Standalone applicationsMagnetic domainComputer scienceSpiceArchitecture designsMRAM devicesMemory cellElectronic engineeringRacetrack memoryPerpendicular magnetic anisotropyMagnetic domainsMagnetoresistive random-access memoryHardware_MEMORYSTRUCTURESIntegration circuitsNanowiresbusiness.industryMagnetic devicesElectrical engineeringNon-volatile memory technologyDomain wall motionTunnel magnetoresistanceData storage equipmentComputer data storageFerromagnetic nanowireNode (circuits)Magnetic tunnel junctionbusinessRandom access storage
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