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RESEARCH PRODUCT

Magnetic domain-wall racetrack memory for high density and fast data storage

W. S. ZhaoY. ZhangH. -P TrinhJ. -O KleinC. ChappertR. MantovanA. LampertiR. P. CowburnTheodossis TrypiniotisM. KlauiJ. HeinenB. OckerD. RavelosonaW. S. ZhaoY. ZhangH. -P TrinhJ. -O KleinC. ChappertR. MantovanA. LampertiR. P. CowburnTheodossis TrypiniotisM. KlauiJ. HeinenB. OckerD. Ravelosona

subject

Standalone applicationsMagnetic domainComputer scienceSpiceArchitecture designsMRAM devicesMemory cellElectronic engineeringRacetrack memoryPerpendicular magnetic anisotropyMagnetic domainsMagnetoresistive random-access memoryHardware_MEMORYSTRUCTURESIntegration circuitsNanowiresbusiness.industryMagnetic devicesElectrical engineeringNon-volatile memory technologyDomain wall motionTunnel magnetoresistanceData storage equipmentComputer data storageFerromagnetic nanowireNode (circuits)Magnetic tunnel junctionbusinessRandom access storage

description

The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm node demonstrate the capabilities of this device to perform high performances. Finally, we compare the potential specifications of the racetrack memory with other advanced non-volatile memory technologies. © 2012 IEEE. Sponsors: IEEE Beijing Section Fudan University Xidian University IEEE Electron Devices Society Shanghai Chapter IEEE SSCS Shanghai Chapter Conference code: 95953 Cited By :13

yearjournalcountryeditionlanguage
2012-10-01
10.1109/icsict.2012.6466687http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6466687